RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

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Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
Datasheet
41,880In Stock
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: 8,000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F
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37,518In Stock
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: 3,000

Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-563)
Datasheet
34,280In Stock
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Mult.: 1
: 4,000

Toshiba Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346)
Datasheet
5,980In Stock
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Mult.: 1
: 3,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM)
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1,948In Stock
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Min.: 1
Mult.: 1
: 3,000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346)
Datasheet
5,992In Stock
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Min.: 1
Mult.: 1
: 3,000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416)
Datasheet
5,998In Stock
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Mult.: 1
: 3,000

Toshiba Digital Transistors AUTO AEC-Q TR NPN Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-346)
Datasheet
5,983In Stock
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: 3,000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=10kO, VCEO=-50V, IC=-0.1A (SOT-416)
Datasheet
5,900In Stock
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Mult.: 1
: 3,000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-346)
Datasheet
2,715In Stock
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: 3,000

Toshiba Digital Transistors AUTO AEC-Q TR PNP Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346)
Datasheet
5,985In Stock
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Min.: 1
Mult.: 1
: 3,000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F
Datasheet
6,000In Stock
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: 3,000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F
Datasheet
4,724In Stock
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Mult.: 1
: 3,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
Datasheet
6,250In Stock
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Min.: 1
Mult.: 1
: 4,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6)
Datasheet
5,644In Stock
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Min.: 1
Mult.: 1
: 3,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
Datasheet
7,700In Stock
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: 4,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
Datasheet
7,762In Stock
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: 4,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-363 (US6)
Datasheet
5,757In Stock
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Mult.: 1
: 3,000

Toshiba MOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F
Datasheet
5,109In Stock
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: 3,000

Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F
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7,484In Stock
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: 3,000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:16.2V @1mA VESD:+/-30V IPP:2.5A IR:0.1uA SOD-323
Datasheet
7,235In Stock
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: 3,000

Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-416)
Datasheet
3,000In Stock
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: 3,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)
Datasheet
11,116In Stock
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: 3,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini)
Datasheet
5,779In Stock
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: 3,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)
Datasheet
7,689In Stock
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: 3,000