RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

Types of Discrete Semiconductors
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Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F
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37,368In Stock
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: 3,000

MOSFETs Si SMD/SMT TSOP6F
Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
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41,000In Stock
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: 8,000

Digital Transistors SMD/SMT VESM-3
Toshiba Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346)
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5,980In Stock
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Digital Transistors SMD/SMT S-Mini-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416)
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5,998In Stock
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: 3,000

Digital Transistors SMD/SMT SSM-3
Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346)
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5,942In Stock
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: 3,000

Digital Transistors SMD/SMT S-Mini-3
Toshiba Digital Transistors AUTO AEC-Q TR NPN Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-346)
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5,953In Stock
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Digital Transistors SMD/SMT SC-59-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=10kO, VCEO=-50V, IC=-0.1A (SOT-416)
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5,119In Stock
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Digital Transistors SMD/SMT SSM-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-346)
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2,715In Stock
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Digital Transistors SMD/SMT S-Mini-3
Toshiba Digital Transistors AUTO AEC-Q TR PNP Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346)
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5,985In Stock
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Digital Transistors SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM)
Datasheet
1,948In Stock
6,000Expected 17/08/2026
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BJTs - Bipolar Transistors Si SMD/SMT USM-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
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5,870In Stock
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: 4,000

BJTs - Bipolar Transistors Si SMD/SMT ES-6
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
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7,688In Stock
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: 4,000

BJTs - Bipolar Transistors Si SMD/SMT ES-6
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
Datasheet
7,662In Stock
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: 4,000

BJTs - Bipolar Transistors Si SMD/SMT ES-6
Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-363 (US6)
Datasheet
5,617In Stock
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: 3,000

BJTs - Bipolar Transistors Si SMD/SMT US-6
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F
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4,724In Stock
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MOSFETs Si SMD/SMT TSOP6F
Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-563)
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30,270In Stock
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: 4,000

Digital Transistors SMD/SMT ES-6
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F
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6,269In Stock
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: 3,000

MOSFETs Si SMD/SMT TSOP6F
Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:16.2V @1mA VESD:+/-30V IPP:2.5A IR:0.1uA SOD-323
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8,113In Stock
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: 3,000

SOD-323-2
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=47kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723)
Datasheet
6,107In Stock
8,000Expected 18/08/2026
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: 8,000

Digital Transistors SMD/SMT VESM-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-416)
Datasheet
3,000In Stock
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: 3,000

Digital Transistors SMD/SMT SSM-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)
Datasheet
10,984In Stock
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BJTs - Bipolar Transistors Si SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini)
Datasheet
5,764In Stock
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: 3,000

BJTs - Bipolar Transistors Si SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)
Datasheet
7,585In Stock
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: 3,000

BJTs - Bipolar Transistors Si SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-323 (USM)
Datasheet
6,937In Stock
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: 3,000

BJTs - Bipolar Transistors Si SMD/SMT USM-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-323 (USM)
Datasheet
487In Stock
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: 3,000

BJTs - Bipolar Transistors Si SMD/SMT USM-3