STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT

STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT is designed using an advanced proprietary trench gate field stop structure. The STMicroelectronics STGWA30M65DF2AG offers an optimal system performance and efficiency balance for inverters, with low-loss and essential short-circuit functionality. The device is AEC-Q101 qualified and features a maximum junction temperature of +175°C, a 6μs short circuit withstand time, low VCE(sat) of 1.7V at 30A, and tight parameter distribution. The device also includes a soft, fast-recovery antiparallel diode and low thermal resistance and is available in a TO-247 long leads package.

Features

  • AEC-Q101 qualified
  • TJ = +175°C maximum junction temperature
  • 6μs of minimum short circuit withstand time
  • Low VCE(sat) = 1.7V (typ.) at IC = 30A
  • Tight parameter distribution
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode

Applications

  • Motor control
  • Auxiliary loads
  • Thermal management
  • General purpose inverters

Circuit Diagram

Application Circuit Diagram - STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT
Published: 2024-09-06 | Updated: 2024-09-12