STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT
STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT is designed using an advanced proprietary trench gate field stop structure. The STMicroelectronics STGWA30M65DF2AG offers an optimal system performance and efficiency balance for inverters, with low-loss and essential short-circuit functionality. The device is AEC-Q101 qualified and features a maximum junction temperature of +175°C, a 6μs short circuit withstand time, low VCE(sat) of 1.7V at 30A, and tight parameter distribution. The device also includes a soft, fast-recovery antiparallel diode and low thermal resistance and is available in a TO-247 long leads package.Features
- AEC-Q101 qualified
- TJ = +175°C maximum junction temperature
- 6μs of minimum short circuit withstand time
- Low VCE(sat) = 1.7V (typ.) at IC = 30A
- Tight parameter distribution
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
Applications
- Motor control
- Auxiliary loads
- Thermal management
- General purpose inverters
Circuit Diagram
Published: 2024-09-06
| Updated: 2024-09-12
