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STGWA30M65DF2AG

Name: STMicroelectronics STGWA30M65DF2AG
Brand: STMicroelectronics
SKU: 511-STGWA30M65DF2AG
Price: 3.67 EUR
Availability: InStock

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Mouser No:

511-STGWA30M65DF2AG

Mfr. No:

STGWA30M65DF2AG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STGWA30M65DF2AG Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGWA30M65DF2AG

In Stock: 766

Stock:: 766 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€3.67	€3.67
	€2.41	€24.10
	€1.80	€216.00
	€1.60	€816.00
	€1.37	€1,397.40
	€1.29	€3,250.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2.02 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	87 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	57 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Unit Weight:	6.100 g

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Datasheet

STGWA30M65DF2AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

STGWA30M65DF2AG Automotive-Grade IGBT

STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT is designed using an advanced proprietary trench gate field stop structure. The STMicroelectronics STGWA30M65DF2AG offers an optimal system performance and efficiency balance for inverters, with low-loss and essential short-circuit functionality. The device is AEC-Q101 qualified and features a maximum junction temperature of +175°C, a 6μs short circuit withstand time, low V_CE(sat) of 1.7V at 30A, and tight parameter distribution. The device also includes a soft, fast-recovery antiparallel diode and low thermal resistance and is available in a TO-247 long leads package.