650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

Results: 28
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package
Datasheet
368In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
293In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
721In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
961In Stock
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package
Datasheet
358In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
435In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
700In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Datasheet
332In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package
Datasheet
Non-Stocked Lead-Time 19 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
23In Stock
720Expected 26/03/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package
Datasheet
115In Stock
240Expected 23/02/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
362In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
199In Stock
240Expected 09/07/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 427 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
222In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 208 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
232In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
202In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package
Datasheet
84In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
Datasheet
208In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
229In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 429 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
337In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
71In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
97In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
110In Stock
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
68In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 338 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
82In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube