ROHM Semiconductor N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.
The SiC MOSFET attributes are especially valuable in medical imaging equipment. Its nearly instantaneous switching abilities enable manufacturers to build high-voltage switches for X-ray machines that allow technicians to better control radiation exposure during tests yet still produce quality results. In manufacturing, the ROHM SCT2080KE MOSFET improves the efficiency of pulse generators by delivering a steep rise time that increases productivity.
Features
- Low ON resistance
- 650V to 120mΩ
- 1200V to 80mΩ to 450mΩ
- 1700V to 750mΩ to 1150mΩ
- Fast switching speed
- Significantly reduced power loss
- Easy to parallel
- Simple to drive
- Pb-free plating
- Fast reverse recovery
- RoHS Compliant
Applications
- Switch mode power supplies
- Solar inverters
- UPS
- EV chargers
- Induction heating equipment
- Motor drives
- Trains
- Wind power converters
Videos
Development Tools
ROHM Semiconductor BD7682FJ-LB-EVK-402 Evaluation Board
Allows evaluating the BD7682FJ-LB IC for AC/DC converters in industrial equipment.
ROHM Semiconductor P04SCT4018KE-EVK-001 Evaluation Board
Designed to optimize the gate drive circuit for the SCT4018KE, with support for TO-247N evaluation.
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