Wolfspeed XM SiC Half-Bridge Modules

Wolfspeed XM Half-Bridge Modules feature a high power density footprint that implements third-generation MOSFET technology with switching-loss or conduction-loss optimization. The XM power module platform maximizes the performance benefits of silicon carbide while keeping the module and system design robust, simple, and cost-effective. With silicon carbide packaging, continuous junction operation at +175°C is achieved, reinforced by a high-reliability silicon nitride (Si3N4) power substrate that ensures mechanical durability even in extreme environments. The high power density and low loop inductance of XM SiC power modules can benefit many applications. The Wolfspeed XM series is ideal for systems that can benefit from a several-factor increase in switching speeds with full SiC modules. These include applications where greater efficiency and reduced module count can result in operational and system-level cost savings, such as industrial, energy storage, transportation, and power generation.