Vishay 800VDC 50A Bidirectional eFuse Reference Design

Vishay 800VDC 50A Bidirectional eFuse Reference Design features SiC MOSFETs and a VOA300 optocoupler, handling continuous power up to 40kW. The board operates continuously at full power with <25W of losses and without requiring active cooling. The design includes a preload function, continuous current monitoring, and overcurrent protection with fault shutdown in only 2.5μs. The eFuse construction uses a standard double-sided four-layer PCB (FR4) with 70μm thick copper for each layer. The overall dimensions are 150mm x 90mm, with some connectors extending beyond the edges. The upper part of PCB houses high-voltage circuitry (12 x SCT4020 SiC MOSFETs), while the lower part contains low-voltage control circuitry with connectors, control buttons, status LEDs, and multiple test points. Vishay 800VDC 50A Bidirectional eFuse Reference Design can be enabled or disabled using the ON / OFF push buttons on the PCB or via an external controller.

Features

  • Includes SiC MOSFETs and a VOA300 optocoupler
  • Handles continuous power up to 40kW
  • Operates continuously at full power with <25W of losses and no active cooling
  • Preload function
  • Continuous current monitoring
  • Overcurrent protection with shutdown in <2.5μs
  • Standard double-sided four-layer PCB (FR4) with 70μm thick copper for each layer
  • 150mm x 90mm dimensions with some connectors extending beyond edge
  • Upper part of PCB houses high-voltage circuitry (12 x SCT4020 SiC MOSFETs)
  • Lower part of PCB has low-voltage control circuitry with connectors, control buttons, status LEDs, and multiple test points
  • Can be enabled or disabled using the ON / OFF push buttons on the PCB or via an external controller

Principle Diagram

Vishay 800VDC 50A Bidirectional eFuse Reference Design

3D Image

Vishay 800VDC 50A Bidirectional eFuse Reference Design
Published: 2023-07-18 | Updated: 2024-03-05