TDK-Lambda i1R ORing MOSFET Modules
TDK-Lambda i1R ORing MOSFET Modules are High-efficiency and low-loss power devices designed to replace traditional diodes. These MOSFET modules utilize advanced MOSFET-based circuitry to minimize reverse-current transients and conduction losses, achieving up to 99.5% efficiency. The i1R ORing MOSFET modules address critical challenges in thermal management and power density, especially in high-current systems. These MOSFET modules provide a compact, shielded form factor that supports up to 80A output current with minimal derating, enabling reliable performance in space-constrained environments. The i1R MOSFET modules feature a wide input voltage range, fast turn-off during fault conditions, and industry-standard packaging. Typical applications include robotics, broadcast, battery-powered equipment, industrial, and COMM.
Features
- Integrated MOSFET-based ORing module: simplifies design, no external components or biasing required
- 500ns (typical) fast turn-off response: blocks reverse current transients during faults for better protection
- Low on resistance and high efficiency: reduces power loss and heat, easing thermal design
- Compact 1in x 1in shielded metal package: saves board space and supports efficient cooling
- Wide input voltage range: works across varied power systems
- Supports up to 80A output: reliable in high-current and space-limited designs
Applications
- Robotics
- Broadcast
- Test and measurement
- Industrial and ICT
- COMM
- Battery-powered equipment
Specifications
- Input voltage range:
- 5VDC to 60VDC (i1R60060A)
- 3.3VDC to 30VDC (i1R30080A)
- Maximum output current:
- 60A (i1R60060A)
- 80A (i1R30080A)
- Safety certifications and markings: CE mark and UKCA mark
- -40°C to 120°C operating temperature (Tc) range
- -55°C to 125°C storage temperature range
- Convection, conduction (baseplate), or forced air cooling
- 20g typical weight
Typical Application Circuit
Performance Graphs
Block Diagram
Dimensions
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