STMicroelectronics MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.
Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
Applications
- Switching applications
- LC converters
- Resonant converters
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View Results ( 20 ) Page
| Part Number | Datasheet | Id - Continuous Drain Current | Vgs - Gate-Source Voltage | Qg - Gate Charge | Pd - Power Dissipation |
|---|---|---|---|---|---|
| STD5N60M2 |  |
3.5 A | - 25 V, 25 V | 8.5 nC | 45 W |
| STI28N60M2 | |
22 A | - 25 V, 25 V | 36 nC | 170 W |
| STP18NM80 | |
17 A | - 30 V, 30 V | 70 nC | 190 W |
| STB28N60M2 | |
22 A | - 25 V, 25 V | 36 nC | 170 W |
| STB40N60M2 | |
34 A | - 25 V, 25 V | 57 nC | 250 W |
| STL13N60M6 | |
7 A | - 25 V, 25 V | 13 nC | 52 W |
| STL10N60M6 | |
5.5 A | - 25 V, 25 V | 8.8 nC | 48 W |
| STP8N80K5 | |
6 A | - 30 V, 30 V | 16.5 nC | 110 W |
| STB33N60M2 | |
26 A | - 25 V, 25 V | 45.5 nC | 190 W |
| STD7NM80 | |
6.5 A | - 30 V, 30 V | 18 nC | 90 W |
Published: 2012-07-24
| Updated: 2023-12-14