Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit
Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit supports flexible experimentation with gallium nitride (GaN) bidirectional switch (BDS) modulation and operation. This kit offers key components such as GaN BDS (TP65B110HRU), MCUs, and an OpAmp. The RTDACHB0000RS-MF-1 provides a half-bridge GaN configuration that serves as a building block for multiple power topologies. This kit offers multiple options to drive the HB, including MCU-based PWM generation and user-supplied PWM signals. The Renesas Electronics RTDACHB0000RS-MF-1 kit features onboard AC zero‑cross detection and ZVS soft‑switching operation.
Features
- Half-bridge BDS GaN configuration
- Multiple options to drive the HB
- MCU-based PWM generation
- User-supplied PWM signals
- Flexible platform to experience GaN BDS modulation and operation
- Onboard AC zero-cross detection
- ZVS soft switching operation
Board Overview
Application Circuit Diagram
Additional Resources
Related Switches
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Published: 2026-03-16
| Updated: 2026-03-24