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ROHM Semiconductor BD2320EFJ-LA High-Side & Low-Side Driver

ROHM Semiconductor BD2320EFJ-LA High-Frequency High-Side and Low-Side Driver is the 100V maximum voltage high-side and low-side gate driver that can drive external Nch-FET using the bootstrap method. The ROHM Semiconductor BD2320EFJ-LA includes a 100V bootstrap diode and independent inputs control for the high side and low side. 3.3V and 5.0V are available for interface voltage. Under Voltage Lockout circuits are built-in for high-side and low-side.

Features

  • Long-time support product for industrial applications
  • Under Voltage Lockout (UVLO) for high-side and low-side driver
  • 3.3V and 5.0V interface voltage
  • Output in-phase with the input signal

Specifications

  • 100V high-side supply voltage and floating voltage
  • 7.5V to 14.5V output voltage range
  • 3.5A/4.5A output current Io+/Io-
  • 27ns (typ) propagation delay
  • 12ns (max) delay matching
  • 10µA (max) offset voltage pin leak current
  • -40°C to +125°C operating temperature range

Applications

  • Power supplies for telecom and datacom
  • MOSFET application
  • Half-bridge and full-bridge converters
  • Forward converters

Block Diagram

Block Diagram - ROHM Semiconductor BD2320EFJ-LA High-Side & Low-Side Driver
Published: 2022-06-15 | Updated: 2023-03-15