Back to onsemi

onsemi Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

The onsemi Trench6 N-Channel MV MOSFETs are offered in a wide range of small-footprint package options for design flexibility.

Features

  • AEC-Q101 qualified and PPAP capable options available
  • Small packages for compact designs
  • Ultra-Low RDS(ON) to reduce conduction losses
  • Optimized gate charge to reduce switching losses
  • High power density
  • Excellent thermal conduction
  • Improved efficiency
  • Halogen-free, Pb-free, and RoHS compliant

Applications

  • ORing
  • Motor drive
  • DC-DC converters
  • Power load switches
  • Battery management
  • High-end computing

Videos

Series Benefits

Infographic - onsemi Trench6 N-Channel MV MOSFETs

Related Products

onsemi Robotics/AMR Solutions

Have capabilities similar to self-driving cars and are complex designs comprising sub-systems.

Learn Moreabout onsemi Robotics/AMR Solutions

onsemi NVMFS5C645N Single N-Channel Power MOSFETs

Features a 92A continuous drain current, 4.6mΩ at 10V RDS(ON), and 60V drain-to-source voltage.

Learn Moreabout onsemi NVMFS5C645N Single N-Channel Power MOSFETs View Productsrelated to onsemi NVMFS5C645N Single N-Channel Power MOSFETs
Published: 2021-05-24 | Updated: 2025-10-01