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Nexperia MJD31C & MJD32C 100V 3A Bipolar Transistors

Nexperia MJD31C and MJD32C 100V 3A Bipolar Junction Transistors (BJT) offer high thermal power dissipation in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. These devices provide high energy efficiency due to low heat generation and feature low collector-emitter saturation voltage. The Nexperia MJD31C and MJD32C are ideal for various applications, including linear voltage regulators, power management, and constant current drive backlighting.

Features

  • High thermal power dissipation capability
  • High energy efficiency due to low heat generation
  • Polarity
    • MJD32C: PNP
    • MJD31C: NPN
  • A low collector-emitter saturation voltage
  • -55°C to +150°C ambient operating temperature 
  • DPAK (SOT428C), 3-leads package type 
  • RoHS compliant

Applications

  • Power management
  • Load switch
  • Constant current drive backlighting application
  • Linear mode voltage regulator
  • Motor drive
  • Relay replacement

Additional Resources

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Package Outline

Mechanical Drawing - Nexperia MJD31C & MJD32C 100V 3A Bipolar Transistors
Published: 2019-09-20 | Updated: 2023-05-04