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Sanan Semiconductor Silicon Carbide Schottky Barrier Diodes

Sanan Semiconductor Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are developed using Sanan’s advanced 3rd generation SiC SBD technology with high performance and reliability. These SBDs register higher efficiency, higher operation temperatures, and lower losses and operate at higher frequencies than Si-based solutions. The Schottky structure shows no recovery at turn-off and allows a low leakage current with a reverse voltage of up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS-compliant components, the Sanan Semiconductor SiC SBDs are qualified for industrial applications.

Features

  • Revolutionary Silicon Carbide (SiC) semiconductor material
  • No reverse recovery
  • High-speed switching performance
  • Temperature independent switching behavior
  • System cost/size savings due to reduced cooling requirements
  • Single or dual anode common cathode configuration options
  • Surface mount and through-hole packages
  • DFN8*8-4L, TO-220-2L, TO-247-2L, TO-247-3L, TO-252-2L, TO-263-2L, and TO-3PF-3L package options
  • -55°C to +175°C junction temperature range
  • Halogen-free and RoHS-compliant

Applications

  • Industrial power supplies and industrial UPS
  • Battery chargers
  • Solar inverters
  • Switch mode power supplies

Specifications

  • 2A to 60A forward current range
  • 21A to 504A forward surge current range
  • 1.3V to 1.4V forward voltage range
  • 650V or 1.2kV reverse voltage options
  • 12µA to 120µA reverse current range

Additional Resources

Published: 2024-04-18 | Updated: 2024-05-07