Infineon Technologies 300V to 1200V IGBTs
Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.
Features
- Low VCE (ON) trench IGBT technology
- Low switching losses
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE(ON) temperature co-efficient
- Ultra-fast soft recovery co-pack diode
- Tight parameter distribution
- Lead-Free
Applications
- U.P.S.
- Welding
- Solar Inverter
- Induction Heating
Related IGBTs
Infineon Technologies IGBT Gate Drives with Murata DC-DC Converters
Used in high power inverter and converter circuits.
View Results ( 3 ) Page
| Part Number | Datasheet | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation |
|---|---|---|---|---|---|---|
| IKP10N60T |  |
600 V | 1.5 V | - 20 V, 20 V | 24 A | 110 W |
| IKW20N60T | |
600 V | 1.5 V | - 20 V, 20 V | 41 A | 166 W |
| IKP20N60T | |
600 V | 1.5 V | - 20 V, 20 V | 41 A | 166 W |
Published: 2011-09-20
| Updated: 2025-10-01