Diodes Incorporated DMN2005K N-Ch E-Mode Field-Effect Transistor
Diodes Inc. DMN2005K N-Channel Enhancement-Mode Field-Effect Transistor is a compact, logic-level MOSFET designed for efficient low-voltage switching and power management applications. Housed in a space-saving SOT-23 package, the device features low on-resistance, a very low gate threshold voltage of 0.9V maximum, and fast switching performance. These features make the DMN2005K ideal for battery-powered and portable electronic systems. The device supports direct drive from low-voltage microcontrollers, FPGAs, and other digital logic devices while minimizing conduction losses and improving overall system efficiency.
The Diodes Inc. transistor offers a 20V drain-source voltage rating, low leakage characteristics, and an ESD-protected gate for enhanced reliability in demanding designs. The combination of low power dissipation, compact footprint, and logic-level operation makes the DMN2005K well suited for load switching, battery management, DC-DC converters, LED driving, relay/solenoid control, and general-purpose low-side switching applications. With a lead-free, RoHS-compliant construction and robust electrical performance, the DMN2005K provides a dependable solution for consumer, industrial, and embedded electronic designs requiring efficient power control.
Features
- Low on-resistance
- Very low 0.9V (maximum) gate threshold voltage
- Fast switching speed
- Low input/output leakage
- Ultra-small surface mount SOT23 package
- Molded plastic, UL 94V-0 flammability-rated case material
- Moisture Sensitivity Level (MSL) 1 per J-STD-020
- Totally lead-free and fully RoHS-compliant
- Halogen-/antimony-free, Green device
- ESD-protected gate
Applications
- Load switching in portable electronics
- Microcontroller and FPGA power switching
- Battery management circuits
- DC-DC converter and power supply circuits
- LED and low-current lighting control
- Motor and actuator control
- General-purpose switching circuits
- Consumer, industrial, and embedded systems
Specifications
- 20V maximum drain-source voltage
- ±10V maximum gate-source voltage
- Maximum drain current per element
- 300mA continuous
- 600mA pulsed
- 350mW total power dissipation
- 357°C/W junction-to-ambient thermal resistance
- -55°C to +150°C operating temperature range
- Matte tin annealed finish over copper leadframe terminals
- ~0.008g weight
Equivalent Circuit
