onsemi GaN Tech Infographic

Powering high-efficiency applications with GaN

Why GaN?

Gallium Nitride (GaN) combines a wide bandgap with ultra-fast switching speeds, making it ideal for next-gen power systems.

Key benefits

• Higher efficiency
• Lower switching losses
• Smaller system size
• Reduced heat generation
• Lower total system cost

Automotive

Challenge

• Minimize switching losses in 400V/800V traction inverters
• Efficiently convert battery power to 48V & 12V systems

GaN solution

• Efficient high-voltage switching at a lower cost than SiC
• Emerging vertical GaN supports higher voltage applications
• 50% smaller & 10% lower cost than silicon solutions

Data centers

Challenge

• Electric motors account for a large share of industrial energy consumption

GaN solution

• Smaller input filters & no electrolytic capacitors
• Reduced size, weight & power losses
• Improved efficiency for battery-powered robots

Industrial robotics

Challenge

• High upfront costs
• Slow adoption in emerging markets

GaN solution

• Bidirectional switches reduce inverter complexity
• Lower system costs
• High-efficiency power conversion for long-term savings

Renewable energy

Challenge

• Rising power density in Al-driven 400V & 800V server racks

GaN solution

• Enables MHz-range zero-voltage switching
• Smaller magnetics, less heat & higher efficiency
• Uses 50% fewer switches than full-bridge rectifiers

Accelerate your next design with onsemi GaNEXUS^™

High-power GaN solutions up to 650V

• High power density
• Compact package options
• Easy integration into existing designs
• Optimized for automotive, industrial, data center & renewable applicaions

Mouser & onsemi

Published: 2026-11-09 © 2026 Mouser Electronics, Inc.