QPD1426/QPD1426L GaN RF Power Transistors

Qorvo QPD1426/QPD1426L GaN RF Power Transistors are 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz, providing typically 53.5dBm of saturated output power with 17dB of large-signal gain and 70% drain efficiency.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Id - Continuous Drain Current Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Maximum Operating Frequency Minimum Operating Frequency Technology
Qorvo GaN FETs 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor
10Expected 26/11/2026
€558.84
€483.62
€464.81
Min.: 1
Mult.: 1
SMD/SMT NI-400-2 N-Channel 1 Channel 7 A - 40 C + 85 C 221 W 2 GHz 0 Hz GaN-on-SiC
Qorvo GaN FETs 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor
10Expected 26/11/2026
€558.84
€483.62
€464.81
Min.: 1
Mult.: 1
SMD/SMT NI-400-2 N-Channel 1 Channel 7 A - 40 C + 85 C 221 W 2 GHz 0 Hz GaN-on-SiC