Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Channel Mode Tradename Technology
EPC GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN 16,202In Stock
6,000Expected 04/11/2026
Cut Tape
€6.62
€3.60
€3.30
€3.14
€2.80
Reel
€2.52
Min.: 1
Mult.: 1
: 3,000
SMD/SMT QFN-5 N-Channel 1 Channel 100 V 101 A 1.2 mOhms - 4 V, 6 V 2.5 V 17 nC - 40 C + 150 C Enhancement eGaN FET GaN
EPC EPC2367A
EPC GaN FETs 100 V enhancement-mode GaN power transistor, 101 A, 1.2 mOhm typ RDS(on), optimized for high-density DC-DC converters and motor drives. Non-Stocked
€6.08
€4.07
€3.27
€2.91
€2.34
Min.: 1
Mult.: 1