GP2T040A120x SiC MOSFETs

SemiQ GP2T040A120x SiC MOSFETs benefit many applications, including Power Factor Correction, DC-DC Converter Primary Switching, and Synchronous rectification. The GP2T040A120x when combined with Silicon Carbide Schottky diodes offers optimal performance that can be achieved without the trade-offs made with Silicon devices. EV Charging, Solar/Wind, Industrial Controls, and HVAC systems benefit from the increased performance achieved with SemiQ SiC MOSFETs.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
SemiQ SiC MOSFETs 1200V, 40mOhm, TO-263-7L MOSFET 25In Stock
€10.97
€7.94
€6.60
€5.89
€5.50
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 66 A 38 mOhms - 10 V, + 25 V 4 V 112 nC - 55 C + 175 C 357 W Enhancement
SemiQ SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-4L 13In Stock
€13.67
€9.30
€7.69
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 63 A 37 mOhms - 10 V, + 25 V 4 V 118 nC - 55 C + 175 C 322 W Enhancement
SemiQ SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-3L
60Expected 13/11/2026
€13.66
€7.73
€7.67
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 63 A 37 mOhms - 10 V, + 25 V 4 V 118 nC - 55 C + 175 C 322 W Enhancement