π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=30W F=1MHZ
Datasheet
1,010In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 7.5 A 500 mOhms 20 V 1.5 V 16 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm
Datasheet
199In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 8 A 900 mOhms 30 V 4.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
Datasheet
1,160In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 8 A 850 mOhms 30 V 2 V 16 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
Datasheet
250In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 840 mOhms 30 V 2 V 25 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm
Datasheet
40Expected 20/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 5 A 1.2 Ohms 30 V 4.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
Datasheet
239Expected 15/01/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 4.5 A 3.1 Ohms 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm
Datasheet
49On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 7.5 A 760 mOhms 30 V 4.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch 500V VDSS 700V 45W 1200pF 10A
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 10 A 720 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 11 A 600 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 10A 40V 25W 410pF 520 mOhms
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 11 A 520 mOhms 25 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 12 A 520 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 525V 45W 1350pF .58
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 12 A 580 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 550V 45W 1550pF 0.57
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 12 A 570 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 13A 450V 45W 1350pF 0.46
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 13 A 460 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12.5A 550V 45W 1800pF 0.48
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 13.5 A 480 mOhms 45 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 14A 550V 50W 2300pF 0.37
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 14 A 370 mOhms 50 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 16A 550V 50W 2600pF 0.33
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 16 A 330 mOhms 50 W MOSVII
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 25 A 70 mOhms 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 200

Si Through Hole PW-Mold2-3 N-Channel 1 Channel 600 V 2 A 4.3 Ohms 30 V 2.4 V 7 nC - 55 C + 150 C 60 W Enhancement MOSVII Reel, Cut Tape
Toshiba MOSFETs N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 4 A 1.7 Ohms 35 W MOSVII
Toshiba MOSFETs N-Ch MOS 3.5A 550V 30W 380pF 2.45 Ohm
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 4 A 2.45 Ohms 30 W MOSVII
Toshiba MOSFETs N-Ch MOS 4A 550V 35W 490pF 1.88
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 4 A 1.88 Ohms 35 W MOSVII
Toshiba MOSFETs N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 4 A 1.9 Ohms 35 W MOSVII
Toshiba MOSFETs N-Ch MOS 4A 500V 80W 380pF 2 Ohm
Datasheet
Non-Stocked
Min.: 2,000
Mult.: 2,000
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 4 A 2 Ohms 80 W MOSVII Reel