STGP30H60DFB

STMicroelectronics
511-STGP30H60DFB
STGP30H60DFB

Mfr.:

Description:
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.55 V
- 20 V, 20 V
60 A
260 W
- 55 C
+ 175 C
STGP30H60DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBTs
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

In Stock: 7,929

Stock:
7,929 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€2.87 €2.87
€1.87 €18.70
€1.28 €128.00
€1.07 €535.00
€0.989 €989.00
€0.937 €1,874.00