80V N-Channel U-MOS X-H MOSFETs

Toshiba 80V N-Channel U-MOS X-H MOSFETs provide high-speed switching, a small gate charge, and low power dissipation. The U-MOS X-H MOSFETs offer an excellent drain-source on-resistance (RDS(ON)) x transmission resistance x input capacitance (Ciss) value leading to high conductivity and low gate driver losses. The reduced output capacitance (COSS) lowers the output charge (QOSS), increasing the switching efficiency of these devices. These MOSFETs are suitable for switching voltage regulators, motor drivers, and high-efficiency DC-DC converters.

Results: 11
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Toshiba MOSFETs UMOS10 TO-220AB 80V 2.4mohm
Datasheet
894In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.44 mOhms - 20 V, 20 V 3.5 V 178 nC + 175 C 300 W Enhancement Tube
Toshiba MOSFETs UMOS10 TO-220AB 80V 5.3mohm
Datasheet
5,464In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 5.3 mOhms - 20 V, 20 V 3.5 V 55 nC + 175 C 150 W Enhancement Tube
Toshiba MOSFETs UMOS10 TO-220SIS 80V 5.1mohm
Datasheet
193In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 70 A 5.1 mOhms - 20 V, 20 V 3.5 V 54 nC + 175 C 45 W Enhancement Tube
Toshiba MOSFETs UMOS10 TO-220SIS 80V 6.8mohm
Datasheet
378In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 58 A 6.8 mOhms - 20 V, 20 V 3.5 V 39 nC + 175 C 41 W Enhancement Tube
Toshiba MOSFETs UMOS10 TO-220AB 80V 7mohm
Datasheet
435In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 64 A 7 mOhms - 20 V, 20 V 3.5 V 39 nC + 175 C 87 W Enhancement Tube
Toshiba MOSFETs UMOS10 DPAK 80V 5.1mohm
Datasheet
4,935Expected 16/11/2026
MouseReel Available
Min.: 1
Mult.: 1
: 2,500

Si SMD/SMT DPAK-2 (TO-252-2) N-Channel 1 Channel 80 V 84 A 5.1 mOhms - 20 V, 20 V 3.5 V 56 nC + 175 C 104 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs UMOS10 DPAK 80V 6.9mohm
Datasheet
9,979Expected 17/08/2026
MouseReel Available
Min.: 1
Mult.: 1
: 2,500

Si SMD/SMT DPAK-2 (TO-252-2) N-Channel 1 Channel 80 V 62 A 6.9 mOhms - 20 V, 20 V 3.5 V 39 nC + 175 C 89 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs 100V U-MOS X-H SOP-Advance(N) 3.1mohm
Datasheet
10,000Expected 14/12/2026
MouseReel Available
Min.: 1
Mult.: 1
: 5,000

Si SMD/SMT SOP-8 N-Channel 1 Channel 100 V 120 A 3.1 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 175 C 210 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs UMOS10 TO-220SIS 80V 3.2mohm
Datasheet
50Expected 16/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 92 A 3.2 mOhms - 20 V, 20 V 3.5 V 102 nC + 175 C 45 W Enhancement Tube
Toshiba MOSFETs UMOS10 TO-220AB 80V 3.3mohm
Datasheet
900Expected 28/01/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 3.3 mOhms - 20 V, 20 V 3.5 V 110 nC + 175 C 230 W Enhancement Tube
Toshiba MOSFETs UMOS10 TO-220SIS 80V 2.4mohm
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 80 V 100 A 2.44 mOhms - 20 V, 20 V 3.5 V 179 nC + 175 C 47 W Enhancement Tube