G2R1000MT33J-TR

GeneSiC Semiconductor
905-G2R1000MT33J-TR
G2R1000MT33J-TR

Mfr.:

Description:
SiC MOSFETs 3300V 1000mohm TO-263-7 G2R SiC MOSFET

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Learn more about GeneSiC Semiconductor G2R1000MT33J-TR

Product Attribute Attribute Value Select Attribute
Navitas Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Brand: GeneSiC Semiconductor
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Series: G2R
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
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Attributes selected: 0

PCN

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.

3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. GeneSiC Semiconductor 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.

In Stock: 220

Stock:
220
Can Dispatch Immediately
On Order:
800
Expected 28/12/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€23.39 €23.39
€16.99 €169.90
€16.13 €1,613.00
€15.27 €7,635.00
Full Reel (Order in multiples of 800)
€14.22 €11,376.00

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