JDV2S41AFS,L3M
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See Product Specifications
See Product Specifications
757-JDV2S41AFSL3M
JDV2S41AFS,L3M
Mfr.:
Description:
Varactor Diodes Variable capacitance diode for electronic tuning applications
Varactor Diodes Variable capacitance diode for electronic tuning applications
Lifecycle:
New At Mouser
Datasheet:
Availability
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Stock:
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0An unexpected error occurred. Please try again later.
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On Order:
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3,236Expected 22/09/202610,000Expected 20/11/2026
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Factory Lead Time:
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18Weeks Estimated factory production time for quantities greater than shown.
Pricing (EUR)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| €1.51 | €1.51 | |
| €0.929 | €9.29 | |
| €0.615 | €61.50 | |
| €0.483 | €241.50 | |
| €0.413 | €413.00 | |
| €0.374 | €935.00 | |
| €0.332 | €1,660.00 | |
| €0.321 | €3,210.00 | |
| €0.313 | €7,825.00 |
Datasheet
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Precautions for using Radio-frequency semiconductor devices
Product Catalogs
Compliance Codes
- TARIC:
- 8541100000
- CNHTS:
- 8541590000
- CAHTS:
- 8541100090
- USHTS:
- 8541100080
- ECCN:
- EAR99
Origin Classifications
- Country of Origin:
- Thailand
- Assembly Country of Origin:
- Not available
- Country of Diffusion:
- Not available
