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MTA8ATF1G64HZ-3G2R1

Name: Micron Technology MTA8ATF1G64HZ-3G2R1
Brand: Micron
SKU: 340-471798
Price: 244.08 EUR
Availability: InStock

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Mouser No:

340-471798

Mfr. No:

MTA8ATF1G64HZ-3G2R1

Mfr.:

Micron

Description:

Memory Modules DDR4 8GByte SODIMM

Lifecycle:

Verify Status with Factory:

Lifecycle information is unclear. Obtain a quote to verify the availability of this part number from the manufacturer.

Datasheet:

MTA8ATF1G64HZ-3G2R1 Datasheet (PDF)

ECAD Model:

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In Stock: 269

Stock:: 269

Can Dispatch Immediately

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On Order:: 600

Expected 18/03/2026

1,790

790

Expected 15/04/2026

1,000

Expected 24/12/2026
Factory Lead Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2659 will be subject to minimum order requirements.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 200

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€244.08	€244.08
	€224.59	€2,245.90
	€217.12	€5,428.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micron Technology
Product Category:	Memory Modules
RoHS:
Product:	SODIMMs
Memory Size:	8 GB
Memory Type:	DDR4
Speed:	3200 MT/s
Operating Supply Voltage:	1.2 V
Maximum Operating Temperature:	+ 95 C
Number of Pins:	260 Pin
Brand:	Micron
Dimensions:	69.73 mm x 30.13 mm x 3.7 mm
Minimum Operating Temperature:	0 C
Packaging:	Tray
Product Type:	Memory Modules
Factory Pack Quantity:	100
Subcategory:	Memory & Data Storage

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Datasheet

MTA8ATF1G64HZ-3G2R1 Datasheet (PDF)

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CNHTS:: 8473309000
CAHTS:: 8473302000
USHTS:: 8473301140
MXHTS:: 8473300401
ECCN:: 4A994.a

DDR4 SDRAM

Micron DDR4 SDRAM has new features centered on power savings, performance enhancement, manufacturability, and reliability improvements. These features improve performance, power, manufacturability, reliability and stacking capabilities for the enterprise, cloud, ultrathin, tablet, automotive and embedded markets. DDR4 has data rates up to 3200MT/s, an operating voltage of 1.2V and additional power saving features. Increases performance up to 50% and deliver total energy savings up to 25% compared to DDR3.