DDR SDRAM

ISSI 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages. The device is available in 8-bit, 16-bit, and 32-bit data word sizes. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. ISSI 512-Mbit DDR SDRAM commands are registered on the positive edges of CLK.

Results: 38
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
ISSI DRAM 512M, 2.5V, DDR, 64Mx8, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT Non-Stocked Lead-Time 8 Weeks
Min.: 108
Mult.: 108

SDRAM - DDR 512 Mbit 8 bit 200 MHz TSOP-II-66 64 M x 8 5 ns 2.5 V 2.7 V - 40 C + 85 C IS43R86400D Tray
ISSI DRAM 512M, 2.5V, DDR, 64Mx8, 166MHz, 60 ball BGA (8mmx13mm) RoHS Non-Stocked Lead-Time 8 Weeks
Min.: 190
Mult.: 190

SDRAM - DDR 512 Mbit 8 bit 166 MHz BGA-60 64 M x 8 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R86400D Tray
ISSI DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM Non-Stocked Lead-Time 8 Weeks
Min.: 190
Mult.: 190

SDRAM - DDR 512 Mbit 8 bit 166 MHz BGA-60 64 M x 8 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R86400D Tray
ISSI DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR 512 Mbit 8 bit 166 MHz TSOP-II-66 64 M x 8 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R86400D Tray
ISSI DRAM Automotive (-40 to +85C), 256M, 2.5V, DDR1, 64Mx8, 200MHz, 60 ball FBGA RoHS Non-Stocked Lead-Time 10 Weeks
Min.: 190
Mult.: 190

SDRAM - DDR 256 Mbit 16 bit 200 MHz BGA-60 16 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS46R16160D Tray
ISSI DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM Non-Stocked Lead-Time 10 Weeks
Min.: 190
Mult.: 190

SDRAM - DDR 256 Mbit 16 bit 166 MHz BGA-60 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS46R16160D Tray
ISSI DRAM Automotive (-40 to +105C), 256M, 2.5V, DDR1, 64Mx8, 166MHz, 60 ball FBGA RoHS Non-Stocked Lead-Time 10 Weeks
Min.: 190
Mult.: 190

SDRAM - DDR 256 Mbit 16 bit 166 MHz BGA-60 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 105 C IS46R16160D Tray
ISSI DRAM Automotive (-40 to +85C), 256M, 2.5V, DDR1, 64Mx8, 166MHz, 66 pin TSOP-II RoHS Non-Stocked Lead-Time 10 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS46R16160D Tray
ISSI DRAM Automotive (-40 to +105C), 256M, 2.5V, DDR1, 64Mx8, 166MHz, 66 pin TSOP-II RoHS Non-Stocked Lead-Time 10 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 105 C IS46R16160D Tray
ISSI DRAM 512M, 2.5V, DDR, 16Mx32, 200MHz, 144-ball BGA (12mmx12mm) RoHS Non-Stocked
Min.: 189
Mult.: 189

SDRAM - DDR 512 Mbit 32 bit 200 MHz LFBGA-144 16 M x 32 5 ns 2.5 V 2.7 V 0 C + 70 C IS43R32160D Tray
ISSI DRAM 512M, 2.5V, DDR, 16Mx32, 200MHz, 144-ball BGA (12mmx12mm) RoHS, IT Non-Stocked
Min.: 189
Mult.: 189

SDRAM - DDR 512 Mbit 32 bit 200 MHz LFBGA-144 16 M x 32 5 ns 2.5 V 2.7 V - 40 C + 85 C IS43R32160D Tray
ISSI DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM Non-Stocked
Min.: 189
Mult.: 189

SDRAM - DDR 128 Mbit 32 bit 250 MHz BGA-144 4 M x 32 700 ps 2.3 V 2.7 V 0 C + 70 C IS43R32400E Tray
ISSI DRAM 256M, 2.5V, DDR, 8Mx32, 166MHz, 144-ball BGA (12mmx12mm) RoHS Non-Stocked
Min.: 189
Mult.: 189

SDRAM - DDR 256 Mbit 32 bit 166 MHz LFBGA-144 8 M x 32 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R32800D Tray