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SQS174ELNW-T1_GE3

Name: Vishay SQS174ELNW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQS174ELNW-T1_GE3
Price: 1.59 EUR
Availability: InStock

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Mouser No:

78-SQS174ELNW-T1_GE3

Mfr. No:

SQS174ELNW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 72-V (D-S) 175C MOSFET

Datasheet:

SQS174ELNW-T1_GE3 Datasheet

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In Stock: 2,173

Stock:: 2,173 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€1.59	€1.59
	€1.01	€10.10
	€0.671	€67.10
	€0.55	€275.00
	€0.538	€538.00
Full Reel (Order in multiples of 3000)
	€0.456	€1,368.00
	€0.452	€4,068.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8SLW
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	72 V
Id - Continuous Drain Current:	87 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	103 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	17 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

SQS174ELNW-T1_GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.