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XPJR6604PB,LXHQ

Name: Toshiba XPJR6604PB,LXHQ
Brand: Toshiba
SKU: 757-XPJR6604PBLXHQ
Price: 2.12 EUR
Availability: InStock

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Mouser No:

757-XPJR6604PBLXHQ

Mfr. No:

XPJR6604PB,LXHQ

Mfr.:

Toshiba

Description:

MOSFETs 40V UMOS9 0.66mohm S-TOGL

Datasheet:

XPJR6604PB,LXHQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba XPJR6604PB,LXHQ

In Stock: 3,360

Stock:: 3,360 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€2.12	€2.12
	€1.31	€13.10
	€1.19	€119.00
	€1.18	€590.00
Full Reel (Order in multiples of 1500)
	€1.04	€1,560.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	530 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	128 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	54 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	152 ns
Typical Turn-On Delay Time:	73 ns

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Datasheet

XPJR6604PB,LXHQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2024 - MOSFETs

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs

Toshiba L-TOGL and S-TOGL AEC-Q101 40V/80V/100V N-Channel MOSFETs deliver ultra-low on-resistance, a high drain current rating, and high heat dissipation. This is achieved by combining high heat dissipation packages [L-TOGL (large transistor outline gull-wing leads) and S-TOGL (small transistor outline gull-wing leads)] with the U-MOS IX-H and U-MOS X-H chip processes. Toshiba L-TOGL and S-TOGL MOSFETs also offer high current capability and high heat dissipation to help improve power density in a wide variety of automotive applications. The L-TOGL package is equivalent in size to the existing TO-220SM(W) package. However, XPQR3004PB greatly improves the current rating and significantly lowers the on-resistance to 0.23mΩ typical. L-TOGLs optimized package footprint also helps improve thermal characteristics when compared to the same-sized TO-220SM(W) package.

U-MOSIII MOSFETs

Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.