HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs POLAR PWR MOSFET 100V, 300A
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 100 V 300 A 5.5 mOhms - 20 V, 20 V 5 V 279 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube
IXYS MOSFETs 40 Amps 1100V 0.2600 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.1 kV 40 A 260 mOhms - 30 V, 30 V 3.5 V 310 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChHiPerFET-Q3 Class TO-264(3)
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.1 kV 40 A 260 mOhms - 30 V, 30 V 3.5 V 300 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 900 V 52 A 160 mOhms - 30 V, 30 V 6.5 V 308 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/62A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 800 V 62 A 140 mOhms - 30 V, 30 V 3.5 V 270 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 70A PLUS264 Power MOSFET
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 70 A 89 mOhms - 30 V, 30 V 3.5 V 350 nC - 55 C + 150 C 1.785 mW Enhancement HiPerFET Tube
IXYS MOSFETs 82 Amps 600V 0.75 Ohm Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 600 V 82 A 75 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/82A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 600 V 82 A 75 mOhms - 30 V, 30 V 275 nC 1.56 kW HiPerFET Tube
IXYS MOSFETs 850V/90A Ultra Junction X-Class
Datasheet
Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 850 V 90 A 41 mOhms - 30 V, 30 V 3.5 V 340 nC - 55 C + 150 C 1.785 kW Enhancement HiPerFET Tube

IXYS MOSFETs 100 Amps 250V 0.027 Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 100 A 27 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube

IXYS MOSFETs 102 Amps 0V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 102 A HiPerFET Tube

IXYS MOSFETs 110 Amps 150V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 150 A 13 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs 110 Amps 0V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 110 A 24 mOhms - 20 V, 20 V 3 V 157 nC - 55 C + 175 C 694 W Enhancement HiPerFET Tube

IXYS MOSFETs Trench HiperFETs Power MOSFETs
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 23 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD
Datasheet
Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 11 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/12A TO-247
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id12 BVdass800
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 12 A 850 mOhms - 30 V, 30 V - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs Trench HiperFETs Power MOSFETs
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 150 A 15 mOhms - 20 V, 20 V 3 V 177 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD
Datasheet
Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 150 A 9 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube

IXYS MOSFETs 15 Amps 1000V 0.76 Rds
Datasheet
Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 760 mOhms - 30 V, 30 V 6.5 V 97 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFETs 160 Amps 150V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 160 A 9.6 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 360 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 330 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD
Datasheet
Non-Stocked
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-247
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube

IXYS MOSFETs 60V/220A TrenchT3
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 60 V 220 A 4 mOhms - 20 V, 20 V 2 V 136 nC - 55 C + 175 C 440 W Enhancement HiPerFET Tube