HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging

IXYS MOSFETs 600V 42A 0.185Ohm PolarP3 Power MOSFET
300Expected 19/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 185 mOhms - 30 V, 30 V 5 V 78 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs 74 Amps 200V 0.034 Rds
600Expected 29/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 74 A 34 mOhms - 20 V, 20 V 5 V 107 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs 96 Amps 200V 0.024 Rds
300Expected 24/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube
IXYS MOSFETs TO264 300V 150A N-CH X3CLASS
300Expected 03/04/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 8.3 mOhms - 20 V, 20 V 4.5 V 254 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET
298Expected 25/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 170 V 220 A 6.3 mOhms - 20 V, 20 V 5 V 500 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
258Expected 25/02/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 240 A 5.2 mOhms - 20 V, 20 V 2.5 V 460 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
300Expected 15/04/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFETs PolarP2 Power MOSFET
300Expected 12/05/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A
650Expected 22/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 360Amps 55V
690On Order
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFETs Trench T2 HiperFET Power MOSFET
300Expected 23/02/2026
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 100 V 130 A 9.1 mOhms - 20 V, 20 V 4.5 V 130 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 3 Amps 1200V 4.5 Rds
80Expected 23/02/2026
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id14 BVdass800
240Expected 10/04/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 720 mOhms - 30 V, 30 V 5.5 V 61 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 150A N-CH X3CLASS
89Expected 03/04/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 8.3 mOhms - 20 V, 20 V 2.5 V 254 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs 500V 22A
300Expected 10/04/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 22 A 270 mOhms - 30 V, 30 V 5.5 V 55 nC - 55 C + 150 C 350 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 500V 14A N-CH POLAR3
28Expected 10/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 14 A 295 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFETs 360Amps 55V
196Expected 19/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFETs 300 Amps 40V
300Expected 27/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 300 A 2.5 mOhms - 20 V, 20 V 4 V 145 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs 500V 36A Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 19 A 190 mOhms - 30 V, 30 V 2.5 V 93 nC - 55 C + 150 C 156 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 50A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 50 A 30 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 150V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 102 A HiPerFET Tube
IXYS MOSFETs 600V 10A Non-Stocked Lead-Time 27 Weeks
Min.: 800
Mult.: 800
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V 5.5 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Reel
IXYS MOSFETs 650V/12A TO-263 Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 100V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 130 A 9.1 mOhms HiPerFET Tube
IXYS MOSFETs TO263 850V 14A N-CH HIPER Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube