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SISH892BDN-T1-GE3

Name: Vishay SISH892BDN-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SISH892BDN-T1-GE3
Price: 1.09 EUR
Availability: InStock

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Mouser No:

78-SISH892BDN-T1-GE3

Mfr. No:

SISH892BDN-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PWRPK 100V 20A N-CH MOSFET

Datasheet:

SISH892BDN-T1-GE3 Datasheet

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In Stock: 34,149

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+€5.00)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	€1.09	€1.09
	€0.688	€6.88
	€0.455	€45.50
	€0.354	€177.00
	€0.322	€322.00
Full Reel (Order in multiples of 3000)
	€0.28	€840.00
	€0.267	€1,602.00

† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	30.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	17.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	29 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	33 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	SISH
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Gen IV Power MOSFET
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9 ns

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Attributes selected: 0

Filter Document:

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

SISH892BDN N-Channel 100V MOSFET

Vishay / Siliconix SISH892BDN N-Channel 100V MOSFET is a TrenchFET^® Gen IV power MOSFET featuring 100% R_g and UIS tested. The SISH892BDN MOSFET offers a 100V V_DS, 20A I_D, and 8nC Q_g. The Vishay / Siliconix SISH892BDN MOSFET is available in a PowerPAK® 1212-8SH package and has an operating junction and storage temperature range of -55°C to +150°C.