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FMMT411FDBWQ-7

Name: Diodes Incorporated FMMT411FDBWQ-7
Brand: Diodes Incorporated
SKU: 621-FMMT411FDBWQ-7
Price: 3.71 EUR
Availability: InStock

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Mouser No:

621-FMMT411FDBWQ-7

Mfr. No:

FMMT411FDBWQ-7

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Avalanche Transistor W-DFN2020-3/SWP T&R 3K

Datasheet:

FMMT411FDBWQ-7 Datasheet (PDF)

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Learn more about Diodes Incorporated FMMT411FDBWQ-7

In Stock: 2,095

Stock:: 2,095 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€3.71	€3.71
	€2.45	€24.50
	€1.73	€173.00
	€1.58	€790.00
Full Reel (Order in multiples of 3000)
	€1.34	€4,020.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	W-DFN2020-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	80 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	100 mV
Pd - Power Dissipation:	1.8 W
Gain Bandwidth Product fT:	110 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	FMMT411FDBWQ-7
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	5 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Collector/Base Gain hFE Min:	100 at 10 mA, 10 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

FMMT411FDBWQ-7 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

FMMT411FDBWQ Low Voltage Avalanche Transistor

Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging produce high-on-current pulses with fast edges. This Diodes Incorporated Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.