FS50R12W2T7 & FS75R12W2T7 EasyPACK™ IGBT Modules

Infineon Technologies FS50R12W2T7 and FS75R12W2T7 EasyPACK™ IGBT Modules are 1200V three-phase input rectifier Insulated Gate Bipolar Transistor Modules. Based on TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diode technology, these devices provide strongly reduced losses and are highly controllable. These modules are specially optimized for industrial drive applications, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained with an operation overload temperature up to +175°C in the power module. 

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies IGBT Modules 1200 V, 50 A sixpack IGBT module
Datasheet
Lead-Time 10 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules 6-Pack 1.2 kV 1.5 V 50 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 75 A sixpack IGBT module
Datasheet
Non-Stocked Lead-Time 10 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules 6-Pack 1.2 kV 1.55 V 65 A 100 nA - 40 C + 175 C Tray