NXH015F120M3F1PTG

onsemi
863-XH015F120M3F1PTG
NXH015F120M3F1PTG

Mfr.:

Description:
MOSFET Modules 15M OHM 1200V 40A M3S SIC FULL BRIDGE MODULE

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about onsemi NXH015F120M3F1PTG

In Stock: 28

Stock:
28 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
€58.54 €58.54
€51.11 €511.10

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Press Fit
42.5 mm x 33.8 mm
N-Channel
1 Channel
1.2 kV
77 A
19 mOhms
- 10 V, 22 V
4.4 V
- 40 C
+ 175 C
198 W
NXH015F120M3F1PTG
Tray
Brand: onsemi
Configuration: Quad
Fall Time: 7.5 ns
Height: 12 mm
Length: 42.5 mm
Product: MOSFET Modules
Product Type: MOSFET Modules
Rise Time: 8.6 ns
Factory Pack Quantity: 28
Subcategory: Discrete and Power Modules
Type: Full Bridge
Typical Turn-Off Delay Time: 103 ns
Typical Turn-On Delay Time: 33.3 ns
Vf - Forward Voltage: 4.67 V
Width: 33.8 mm
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

NXH015F120M3F1PTG Silicon Carbide (SiC) Module

onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module features 15mΩ/1200V M3S SiC MOSFET full-bridge topology and a thermistor with Al2O3 DBC in an F1 package. This power module features at +22V/-10V gate source voltage, 77A continuous drain current @ TC = 80°C (TJ = 175°C), 198W maximum power dissipation, and 12.7mm creepage distance. The NXH015F120M3F1PTG SiC MOSFET comes with pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The SiC module is Pb-free, Halide-free, and RoHS compliant. Typical applications include a solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power.

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