NDSH20120C

onsemi
863-NDSH20120C
NDSH20120C

Mfr.:

Description:
SiC Schottky Diodes Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

ECAD Model:
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In Stock: 174

Stock:
174 Can Dispatch Immediately
Factory Lead Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€7.77 €7.77
€5.36 €53.60
€4.46 €446.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
20 A
1.2 kV
1.38 V
119 A
200 uA
- 55 C
+ 175 C
NDSH20120C
Tube
Brand: onsemi
Pd - Power Dissipation: 214 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 450
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 1.2 kV
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Attributes selected: 0

CNHTS:
8541100000
ECCN:
EAR99

NDSH20120C Silicon Carbide (SiC) Diodes

onsemi NDSH20120C Silicon Carbide (SiC) Diodes provide superior switching performance and higher reliability than silicon. The onsemi NDSH20120C features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.