APML-600JV/JT Photo MOSFETs

Broadcom APML-600JV/JT Photo MOSFETs are high-voltage photo MOSFETs designed for automotive applications. These MOSFETs consist of an AlGaAs infrared Light Emitting Diode (LED) input stage that is optically coupled to a high-voltage output detector circuit. This detector consists of a high-speed photovoltaic diode array and driver circuitry to switch ON/OFF two discrete high-voltage MOSFETs. The APML-600JV/JT photo MOSFET turns ON (contact closes) with a minimum input current of 1.5mA through the input LED. The photo MOSFET turns OFF (contact opens) with an input voltage of 0.4V or less. The APML-600JV/JT MOSFETs feature a compact solid-state bi-directional signal switch and are AEC-Q101 qualified. The APML-600JV/JT MOSFETs provide reinforced insulation and reliability to deliver safe signal isolation in automotive and high-temperature industrial applications. Ideally, these MOSFETs are used in battery insulation resistance measurement/leakage detection and Battery Management System (BMS).

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Broadcom / Avago MOSFET Output Optocouplers Automotive Optocoupler, LF
Datasheet
1,158In Stock
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SMD/SMT SO-16 MOSFET 1 Channel 5000 Vrms 5 mA 20 mA 1.41 V 6 V 100 mW, 1 W - 40 C + 125 C APML
Broadcom / Avago MOSFET Output Optocouplers Automotive Optocoupler, LF
Datasheet
1,340In Stock
Min.: 1
Mult.: 1

SMD/SMT SO-16 MOSFET 1 Channel 5000 Vrms 5 mA 20 mA 1.41 V 6 V 100 mW, 1 W - 40 C + 105 C APML