APS6408L-3OC-BA

AP Memory
878-APS6408L-3OC-BA
APS6408L-3OC-BA

Mfr.:

Description:
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC)

Datasheet:
ECAD Model:
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Learn more about AP Memory APS6408L-3OC-BA

In Stock: 160

Stock:
160 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
€2.13 €2.13
€2.00 €20.00
€1.94 €48.50
€1.89 €94.50
€1.85 €185.00
€1.79 €447.50
€1.76 €880.00
€1.72 €1,720.00
€1.66 €4,150.00

Product Attribute Attribute Value Select Attribute
AP Memory Technology
Product Category: DRAM
RoHS:  
PSRAM (Pseudo SRAM)
64 Mbit
8 bit
200 MHz
BGA-24
8 M x 8
2.7 V
3.6 V
- 40 C
+ 85 C
IoT RAM
Tray
Brand: AP Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 4800
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

APS6408L-3OC-BA DDR Octal SPI PSRAM

AP Memory APS6408L-3OC-BA Double Data Rate (DDR) Octal SPI PSRAM is designed with auto temperature-compensated self-refresh by the built-in temperature sensor and partial array self-refresh. This octal PSRAM features software reset, reset pin, and an ultra-low power half-sleep mode with data retention. The APS6408L-3OC-BA PSRAM offers a clock rate of up to 133MHz 266Mb/s read/write throughput operating within a 2.7V to 3.6V (VDD) single supply voltage range. This octal PSRAM holds 64MB in capacity and is organized in an 8M x 8-bit configuration. It utilizes a page size of 1024 bytes, and the column addresses range from AY0 to AY9, while row addresses span from AX0 to AX12.

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