It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SISD5300DN-T1-GE3

Name: Vishay SISD5300DN-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SISD5300DN-T1-GE3
Price: 2.06 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SISD5300DN-T1-GE3

Mfr. No:

SISD5300DN-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAK1212 N-CH 30V 62A

Datasheet:

SISD5300DN-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay / Siliconix SISD5300DN-T1-GE3

In Stock: 4,418

Stock:: 4,418 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€2.06	€2.06
	€1.32	€13.20
	€0.912	€91.20
	€0.724	€362.00
	€0.699	€699.00
Full Reel (Order in multiples of 3000)
	€0.603	€1,809.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 1212-F-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	198 A
Rds On - Drain-Source Resistance:	870 uOhms
Vgs - Gate-Source Voltage:	- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	27 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	57 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	162 S
Product Type:	MOSFETs
Rise Time:	90 ns
Series:	SISD
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	26 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SISD5300DN-T1-GE3 Datasheet

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SiSD5300DN 30V N-Channel MOSFET

Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET is a TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance. Operating within a -55°C to +150°C junction temperature range, SiSD5300DN features a very low drain-source resistance and gate charge figure of merit (FOM). Applications include DC/DC converters, synchronous rectification, battery management, O-rings, and load switches.

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.