SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

Results: 24
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY
Datasheet
97In Stock
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 79 A 500 nA + 175 C Tube
Toshiba SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
Datasheet
30In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 16 A 650 V 1.6 V 130 A 400 nA + 175 C Tube
Toshiba SiC Schottky Diodes V=650 IF=8A
Datasheet
7In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-2 Single 8 A 650 V 1.45 V 69 A 400 nA + 175 C Tube

Toshiba SiC Schottky Diodes RECT 1.2KV 18A RDL SIC SKY
Datasheet
36In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Common Anode 36 A 1.2 kV 1.27 V 820 A 500 nA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 61A RDL SIC SKY
Datasheet
114In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 61 A 1.2 kV 1.27 V 1.08 kA 2 uA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes SiC Schottky barrier diode;TO-247-2L; Vrrm=1200V; IF=40A; PD=454W
Datasheet
28In Stock
30Expected 01/05/2026
Min.: 1
Mult.: 1

Through Hole TO-247-2L Single 102 A 1.2 kV 1.27 V 1.91 kA 3.6 uA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 38A RDL SIC SKY
Datasheet
56In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 38 A 1.2 kV 1.27 V 690 A 1 uA - 55 C + 175 C Tube

Toshiba SiC Schottky Diodes RECT 1.2KV 32A RDL SIC SKY
Datasheet
24In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Common Anode 64 A 1.2 kV 1.27 V 1.38 kA 1 uA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 30A RDL SIC SKY
Datasheet
67In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-2L Single 83 A 1.2 kV 1.27 V 1.63 kA 2.8 uA + 175 C
Toshiba SiC Schottky Diodes RECT 650V 12A RDL SIC SKY
Datasheet
20In Stock
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 92 A 600 nA + 175 C Tube
Toshiba SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A
Datasheet
11In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 12 A 650 V 1.6 V 104 A 300 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY
Datasheet
15In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.27 V 940 A 1.4 uA - 55 C + 175 C Tube

Toshiba SiC Schottky Diodes RECT 1.2KV 25A RDL SIC SKY
Datasheet
15In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Common Anode 50 A 1.2 kV 1.27 V 1.06 kA 700 nA - 55 C + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY
Datasheet
60In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 20 A 650 V 1.6 V 158 A 500 nA + 175 C Tube
Toshiba SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=24A
Datasheet
6In Stock
90Expected 10/08/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 24 A 650 V 1.6 V 184 A 600 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 2A RDL SIC SKY
Datasheet
8In Stock
300Expected 15/06/2026
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 2 A 650 V 1.45 V 21 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 4A RDL SIC SKY
Datasheet
116In Stock
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 37 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 6A RDL SIC SKY
Datasheet
200Expected 17/07/2026
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 6 A 650 V 1.45 V 52 A 300 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 83 A 500 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 12A RDL SIC SKY
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 97 A 600 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 3A RDL SIC SKY
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 3 A 650 V 1.45 V 27 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 4A RDL SIC SKY
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 39 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes V=650 IF=6A
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220-2 Single 6 A 650 V 1.45 V 55 A 300 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 8A RDL SIC SKY
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 8 A 650 V 1.45 V 65 A 400 nA + 175 C Tube