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EVAL3K3WBIDIPSFBTOBO1

Name: Infineon EVAL3K3WBIDIPSFBTOBO1
Brand: Infineon Technologies
SKU: 726-EVAL3K3WBIDIPSFB
Price: 642.85 EUR
Availability: InStock

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Mouser No:

726-EVAL3K3WBIDIPSFB

Mfr. No:

EVAL3K3WBIDIPSFBTOBO1

Mfr.:

Infineon Technologies

Description:

Power Management IC Development Tools SONSTIGES

Datasheet:

EVAL3K3WBIDIPSFBTOBO1 Datasheet (PDF)

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Learn more about Infineon Technologies EVAL3K3WBIDIPSFBTOBO1

In Stock: 6

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€642.85	€642.85

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Power Management IC Development Tools
Product:	Evaluation Boards
Type:	Voltage Regulator - Switching Regulator
Input Voltage:	350 V to 415 V
Output Voltage:	54.5 V
Tool Is For Evaluation Of:	IPL60R075CFD7, IDH08G65C6, IPU80R4K5P7, BSC093N15NS5, 2EDS8265H, 2EDF7275F, XMC4200-F64k256BA, ICE5QSAG, BAT165, IFX91041EJV33
Brand:	Infineon Technologies
Packaging:	Bulk
Product Type:	Power Management IC Development Tools
Factory Pack Quantity:	1
Subcategory:	Development Tools
Part # Aliases:	EVAL_3K3W_BIDI_PSFB SP001034988
Unit Weight:	1.458 kg

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Datasheet

EVAL3K3WBIDIPSFBTOBO1 Datasheet (PDF)

Product Catalogs

TARIC:: 8473302000
CNHTS:: 8543709990
CAHTS:: 8543700000
USHTS:: 8543709860
JPHTS:: 854370000
ECCN:: EAR99

Development Tools

Infineon Development Tools offer a wide selection to enable the engineer's unique design, regardless of the target application. These range from LED lighting, power management, sensors, analog & digital ICs, communication, optoelectronic, and embedded development tools.
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EVAL_3K3W_BIDI_PSFB Evaluation Board

Infineon Technologies EVAL_3K3W_BIDI_PSFB Evaluation Board is a complete solution for the 3300W bi-directional DC-DC converter. Ideal applications include telecoms, battery formation power, and industrial robotics. The 600V CoolMOS™ CFD7 super junction MOSFET is housed in a ThinPAK package and is the most recent and best-performance fast-body diode device. The MOSFET achieves great performance with minimum stress when combined with a low parasitic package and an optimised layout.