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MSC025SMA330B4N

Name: Microchip MSC025SMA330B4N
Brand: Microchip Technology
SKU: 579-MSC025SMA330B4N
Price: 168.35 EUR
Availability: OutOfStock

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Mouser No:

579-MSC025SMA330B4N

Mfr. No:

MSC025SMA330B4N

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 3300V 25 mOhm TO-247-4 Notch

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MSC025SMA330B4N Datasheet (PDF)

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Learn more about Microchip Technology MSC025SMA330B4N

Availability

Stock:: 0

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€168.35	€168.35

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Package/Case:	TO-247-4
Vds - Drain-Source Breakdown Voltage:	3.3 kV
Id - Continuous Drain Current:	104 A
Rds On - Drain-Source Resistance:	25 mOhms
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Brand:	Microchip Technology
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	30
Subcategory:	Transistors
Type:	Discrete mSiC MOSFET

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Datasheet

MSC025SMA330B4N Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MSC025SMA330B4N N-Channel mSiC™ MOSFET

Microchip Technology MSC025SMA330B4N N-Channel mSiC™ MOSFET is a 3300V discrete silicon carbide power MOSFET in the MA Family. The device employs a TO-247-4 Notch package and supports high-voltage switching in demanding power-electronics designs. The MSC025SMA330B4N is developed to reduce conduction losses and improve system efficiency via low on-state resistance and reliable switching performance. Microchip Technology MSC025SMA330B4N N-Channel mSiC MOSFET also offers low capacitances, low gate charge, fast switching speed, and stable operation at elevated junction temperatures.