NCP51705MNTXG

onsemi
863-NCP51705MNTXG
NCP51705MNTXG

Mfr.:

Description:
Gate Drivers SIC MOSFET DRIVER

Datasheet:
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In Stock: 11,603

Stock:
11,603 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€3.55 €3.55
€2.73 €27.30
€2.52 €63.00
€2.25 €225.00
€2.05 €512.50
€2.00 €1,000.00
€1.92 €1,920.00
Full Reel (Order in multiples of 3000)
€1.91 €5,730.00
† A MouseReel™ fee of €5.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
Low-Side
SMD/SMT
QFN-24
1 Driver
1 Output
6 A
10 V
22 V
8 ns
8 ns
- 40 C
+ 125 C
NCP51705
Reel
Cut Tape
MouseReel
Brand: onsemi
Logic Type: TTL
Maximum Turn-Off Delay Time: 50 ns
Maximum Turn-On Delay Time: 50 ns
Operating Supply Current: 12 mA
Pd - Power Dissipation: 2.9 W
Product Type: Gate Drivers
Propagation Delay - Max: 50 ns
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
8541290100
MXHTS:
8542399999
ECCN:
EAR99

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

NCP51705 Gate Driver

onsemi NCP51705 Gate Driver is designed to primarily drive SiC MOSFET transistors. This gate driver achieves the lowest possible conduction losses, the driver is capable to deliver the maximum gate voltage to the SiC MOSFET device. The NCP51705 driver utilizes its onboard charge pump to generate a user selectable negative voltage rail. This gate driver provides an externally accessible 5V rail to power the secondary side of digital or high-speed opto-isolators. The NCP51705 driver offers protection functions such as under-voltage lockout monitoring and thermal shutdown based on the junction temperature of the driver circuit. Typical applications include driving SiC MOSFETs, industrial inverters, motor drivers, PFC, AC to DC, and DC to DC converters.

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