It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

CGHV50200F

Name: MACOM CGHV50200F
Brand: MACOM
SKU: 941-CGHV50200F
Price: 1418.91 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

941-CGHV50200F

Mfr. No:

CGHV50200F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt

Datasheet:

CGHV50200F Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM CGHV50200F

Shipping Alert:

This product may require additional documentation to export from the United States.

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 10 Multiples: 10

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€1,418.91	€14,189.10

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	Screw Mount
Package/Case:	4402015
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	17 A
Vgs th - Gate-Source Threshold Voltage:	- 3.4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Development Kit:	CGHV50200F-AMP
Gain:	11.5 dB
Maximum Operating Frequency:	5 GHz
Minimum Operating Frequency:	4.4 GHz
Output Power:	180 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CGHV50200F Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: 3A001.b.3.a

CGHV50200F GaN HEMT

MACOM CGHV50200F 200W Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is ideal for SatCom applications, such as troposcatter communications and beyond line-of-sight (BLOS). Thise GaN HEMT is matched to 50Ω for ease of use and is designed for continuous wave (CW), pulse, and linear modes of power amplifier operation. The device is supplied in a ceramic/metal flange type 440217 package and offers high efficiency, high gain, and wide bandwidth capabilities. MACOM CGHV50200F GaN HEMT delivers a higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than conventional silicon (Si) and gallium arsenide (GaAs) devices.