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AFGHL50T65SQDC

Name: onsemi AFGHL50T65SQDC
Brand: onsemi
SKU: 863-AFGHL50T65SQDC
Price: 9.8 EUR
Availability: OutOfStock

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Mouser No:

863-AFGHL50T65SQDC

Mfr. No:

AFGHL50T65SQDC

Mfr.:

onsemi

Description:

IGBTs Hybrid iGBT 650V 50A FS4 with SiC-SBD

Datasheet:

AFGHL50T65SQDC Datasheet

ECAD Model:

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Availability

Stock:: 0

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On Order:: 900

Expected 27/03/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€9.80	€9.80
	€5.79	€57.90
	€5.03	€503.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	SiC
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	268 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	AFGHL50T65SQDC
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current Ic Max:	100 A
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Tradename:	EliteSiC
Unit Weight:	7.326 g

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Datasheet

AFGHL50T65SQDC Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

AFGHL50T65SQDC Hybrid IGBT

onsemi AFGHL50T65SQDC Hybrid IGBT offers optimum performance with both low conduction and switching losses. The AFGHL50T65SQDC features 50A current and 650V collector to emitter voltage. The device is ideal for high-efficiency operations in various applications, specifically totem pole bridgeless PFC and inverters. The AFGHL50T65SQDC Hybrid IGBT is AEC-Q100 qualified for automotive applications.