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TP65H015G5WS

Name: Renesas Electronics TP65H015G5WS
Brand: Renesas Electronics
SKU: 227-TP65H015G5WS
Price: 18.98 EUR
Availability: InStock

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Mouser No:

227-TP65H015G5WS

Mfr. No:

TP65H015G5WS

Mfr.:

Renesas Electronics

Description:

GaN FETs GAN FET 650V 95A TO2 47

Datasheet:

TP65H015G5WS Datasheet (PDF)

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Learn more about Renesas Electronics TP65H015G5WS

In Stock: 409

Stock:: 409 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€18.98	€18.98
	€18.47	€184.70
	€17.35	€1,735.00
	€11.47	€5,735.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	95 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	276 W
Channel Mode:	Enhancement
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	10 ns
Packaging:	Tube
Product Type:	GaN FETs
Rise Time:	20 ns
Factory Pack Quantity:	900
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	132 ns
Typical Turn-On Delay Time:	78 ns

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Datasheet

TP65H015G5WS Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TP65H015G5WS SuperGaN® FET

Renesas Electronics TP65H015G5WS SuperGaN^® FET is a 650V, 15mΩ gallium nitride GaN normally-off FET that implements a Gen V SuperGaN platform. The platform employs advanced epi and patented design technologies. These Renesas TP65H015G5WS features simplify manufacturability while enhancing efficiency over silicon through a lower gate charge, output capacitance, crossover loss, and reverse recovery charge.