+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (UK) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SIJK5100E-T1-GE3

Name: Vishay SIJK5100E-T1-GE3
Brand: Vishay
SKU: 78-SIJK5100E-T1-GE3
Price: 5.45 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIJK5100E-T1-GE3

Mfr. No:

SIJK5100E-T1-GE3

Mfr.:

Vishay

Description:

MOSFETs PWRPK 100V 417A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SIJK5100E-T1-GE3 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay SIJK5100E-T1-GE3

In Stock: 4,384

Stock:: 4,384 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€5.45	€5.45
	€3.79	€37.90
	€2.77	€277.00
Full Reel (Order in multiples of 1500)
	€2.35	€3,525.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-16
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	417 A
Rds On - Drain-Source Resistance:	1.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	131 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	536 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay
Configuration:	Single
Fall Time:	35 ns
Forward Transconductance - Min:	245 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	SIJK5100E
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	41 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIJK5100E-T1-GE3 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiJK5100E N-Channel MOSFET

Vishay / Siliconix SiJK5100E N-Channel MOSFET is a TrenchFET^® Gen V power MOSFET with 100V drain-source voltage. This MOSFET features 536W maximum power dissipation at +25°C, 487A continuous source-drain diode current at +25°C, and a single configuration. The SiJK5100E is UIS tested, lead free, and halogen free. Vishay / Siliconix SiJK5100E N-Channel MOSFET operates within a -55°C to +175°C temperature range. Typical applications include synchronous rectification, automation, power supplies, motor drive control, and battery management.