CGHV14800F

Name: MACOM CGHV14800F
Brand: MACOM
SKU: 941-CGHV14800F
Price: 1345.19 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

941-CGHV14800F

Mfr. No:

CGHV14800F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 1.2-1.4GHz, 800 Watt

Datasheet:

CGHV14800F Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM CGHV14800F

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 10 Multiples: 10

Unit Price:

€-.--

Ext. Price:

€-.--

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€1,345.19	€13,451.90

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440117
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	24 A
Vgs th - Gate-Source Threshold Voltage:	- 3.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 100 C
Brand:	MACOM
Development Kit:	CGHV14800F-TB
Gain:	14 dB
Maximum Operating Frequency:	1.4 GHz
Minimum Operating Frequency:	1.2 GHz
Output Power:	800 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	71 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CGHV14800F Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

CGHV14800 GaN HEMT

MACOM CGHV14800F 800W Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) is designed specifically for high efficiency, high gain, and wide bandwidth capabilities. The module is ideal for 1.2GHz to 1.4GHz L-band radar amplifier applications, such as air traffic control (ATC), weather, penetration, and military. MACOM CGHV14800F GaN HEMT operates at 50V, typically delivering more than 65% drain efficiency. This device is supplied in a ceramic/metal flange type 440117 package.