STGD4H60DF

STMicroelectronics
511-STGD4H60DF
STGD4H60DF

Mfr.:

Description:
IGBTs Trench gate field-stop 600 V, 4 A high speed H series IGBT
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Datasheet:
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In Stock: 2,485

Stock:
2,485 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
€-.--
Ext. Price:
€-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
€1.06 €1.06
€0.666 €6.66
€0.439 €43.90
€0.352 €176.00
€0.316 €316.00
Full Reel (Order in multiples of 2500)
€0.285 €712.50
€0.243 €1,215.00
€0.241 €2,410.00
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
DPAK-3 (TO-252-3)
SMD/SMT
Single
600 V
1.95 V
20 V
8 A
75 W
- 55 C
+ 175 C
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 2500
Subcategory: IGBTs
Unit Weight: 330 mg
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

STGD4H60DF 600V 4A High-Speed H Series IGBT

STMicroelectronics STGD4H60DF 600V 4A High-Speed H Series IGBT is designed with an advanced trench gate field-stop structure. The STMicroelectronics STGD4H60DF IGBTs in the H Series balance conduction and switching efficiency, making them ideal for high-frequency converters. The devices also offer a slightly positive VCE(sat) temperature coefficient and consistent parameter distribution for safer parallel operation.

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